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27 Ito C, Banerjee K, Dutton R Analysis and optimization of distributed ESD protection circuits for high-speed mixed-signal and RF applications Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2001 p 355 63 28 Ito C, Banerjee K, Dutton R Analysis and design of distributed ESD protection circuits for highspeed mixed-signal and RF applications IEEE Transactions on Electron Devices 2002;49: 1444 54 29 Worley E, Bakulin A Optimization of input protection diode for high speed applications Proceedings of the Electrical Overstress/Electrostatic discharge (EOS/ESD) Symposium, 2002 p 62 72 30 Kuo BJ, Ker MD New distributed ESD protection circuit for broadband RF ICs Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC), November 12 13, 2003 p 163 8 31 Ker MD, Kuo BJ New distributed ESD protection circuit for broadband RF ICs Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC), 2003 p 163 8 32 Ker MD, Kuo BJ.

my $messages = $gmail->get_messages(); foreach ( @{$messages} ) { my $email = $gmail->get_indv_email( msg => $_ ); if ( defined( $email->{ $_->{ id } }->{ attachments } ) ) { foreach ( @{ $email->{ $_->{ id } }->{ attachments } } ) { # Here do something with each attachment } } }

Researchers contemplating a retrospective data collection effort should be forewarned, however, that their data will be imperfect Although rare events (eg, suicide attempts or hospitalization) may be remembered inde nitely and highly salient events (eg, initial use of drugs or rst symptoms of an illness) may be remembered for two or three years, habitual events (eg, ongoing symptoms and substance use) are too embedded in an individual s life to be remembered precisely (Bradburn, 1983; Sudman & Bradburn, 1982) The longer the time period is, the greater the error (And, as noted earlier, if the target event can lead to death, the collection of retrospective data from a cohort ensures that sampling will be biased by the omission of those who have already succumbed.

Optimization of broadband RF performance and ESD robustness by p-model distributed ESD protection scheme Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2004 p 32 9 33 Hsiao YW, Kuo BJ, Ker MD ESD protection design for a 1 10 GHz wideband distributed ampli er in CMOS technology Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC), 2004 p 90 4 34 Voldman S, Williams RQ ESD network with capacitor blocking element US Patent No 6,433,985 (August 13, 2002) 35 Richier C Investigation on different ESD protection strategies devoted to 33 V RF applications (2 GHz) in a 018 mm CMOS process Proceedings of the Electrical Overstress/Electrostatic discharge (EOS/ESD) Symposium, 2000 p 251 9 36 Wunsch DC, Bell RR Determination of threshold voltage levels of semiconductor diodes and transistors due to pulsed voltages IEEE Transactions on Nuclear Science 1968;NS-15(6):244 59 37 Tasca DM.

Pulse power failure modes in semiconductors IEEE Transactions on Nuclear Science 1970;NS-17(6):346 72 38 Anand Y, Morris G, Higgins V Electrostatic failure of X-band silicon Schottky barrier diodes Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 1979 p 97 103 39 Vlasov VA, Sinkevitch VF Elektronnaya Technika 1971;4:68 75 40 Brown WD Semiconductor device degradation by high amplitude current pulses IEEE Transactions on Nuclear Science 1972;NS-19:68 75 41 Minear RL, Dodson GA The phantom emitter an ESD-resistant bipolar transistor design and its applications to linear integrated circuits Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 1979 p 188 92 42 Whalen JJ, Calcatera MC, Thorn M Microwave nanosecond pulse burnout properties of GaAs MESFETs Proceedings of the IEEE MTT-S International Microwave Symposium, May 1979 p 443 5 43 Whalen JJ, Domingos H Square pulse and RF pulse overstressing of UHF transistors Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 1979.

) Three errors are common in retrospective data collection: (a) memory failures, in which respondents forget events entirely; (b) telescoping, in which events are remembered as.

p 140 6 44 Smith JS, Littau WR Prediction of thin- lm resistor burn-out Proceedings of the Electrostatic Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 1981 p 192 7 45 Alexander DR, Enlow EW Predicting lower bounds on failure power distributions of silicon npn transistors IEEE Transactions on Nuclear Science 1981;NS-28(6):145 50 46 Enlow EN Determining an emitter-base failure threshold density of npn transistors Proceedings of the Electrostatic Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 1981 p 145 50 47 Pierce D, Mason R A Probabilistic estimator for bounding transistor emitter-base junction transient-induced failures Proceedings of the Electrostatic Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 1982 p 82 90..

where W2 is the parameter matrix, and cjt is the output of the jth neuron in the normalized layer when the tth training pattern enters the network.

Some real-time multicast transfers use a simplex approach that makes it real near real-time they buffer the incoming data for about 30 seconds and start the play. While the information is being used, the application continues to buffer the incoming data for playback. Not perfect, but it s better than nothing.